具有反向短通道效應N型MOS元件性能及可靠性的研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	莊紹勳	en_US
dc.contributor.author	Chung Steve S	en_US
dc.date.accessioned	2014-12-13T10:39:09Z	-
dc.date.available	2014-12-13T10:39:09Z	-
dc.date.issued	1996	en_US
dc.identifier.govdoc	NSC85-2215-E009-052	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96138	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=234658&docId=43079	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	反向短通道效應	zh_TW
dc.subject	臨限電壓	zh_TW
dc.subject	次微米元件	zh_TW
dc.subject	金氧半導體	zh_TW
dc.subject	Reverse short-channel effect	en_US
dc.subject	Threshold voltage	en_US
dc.subject	Submicron device	en_US
dc.subject	MOS	en_US
dc.title	具有反向短通道效應N型MOS元件性能及可靠性的研究	zh_TW
dc.title	Performance and Reliability Evaluations of Submicron-MOSFET's with Reverse Short Channel Effect	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
顯示於類別：	研究計畫