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dc.contributor.authorChang, M. R.en_US
dc.contributor.authorLee, P. T.en_US
dc.contributor.authorMcAlister, S. P.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:12:32Z-
dc.date.available2014-12-08T15:12:32Z-
dc.date.issued2008-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2007.915381en_US
dc.identifier.urihttp://hdl.handle.net/11536/9622-
dc.description.abstractWe have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of - 1.3 V, and a field-effect mobility of 0.71 cm(2)/V.s. This occurred along with an ON-OFF state drive current ratio of 1.0 x 10(5), when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm(2) that is given by the HftaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 x 10(-7) A/cm(2) at 2 V.en_US
dc.language.isoen_USen_US
dc.subjectHfLaOen_US
dc.subjecthigh-kappaen_US
dc.subjectorganic thin-film transistors (OTFTs)en_US
dc.subjectsubthreshold swing (SS)en_US
dc.titleLow subthreshold swing HfLaO/pentacene organic thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2007.915381en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue3en_US
dc.citation.spage215en_US
dc.citation.epage217en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000253441900004-
dc.citation.woscount36-
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