標題: Low subthreshold swing HfLaO/pentacene organic thin-film transistors
作者: Chang, M. R.
Lee, P. T.
McAlister, S. P.
Chin, Albert
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: HfLaO;high-kappa;organic thin-film transistors (OTFTs);subthreshold swing (SS)
公開日期: 1-三月-2008
摘要: We have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of - 1.3 V, and a field-effect mobility of 0.71 cm(2)/V.s. This occurred along with an ON-OFF state drive current ratio of 1.0 x 10(5), when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm(2) that is given by the HftaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 x 10(-7) A/cm(2) at 2 V.
URI: http://dx.doi.org/10.1109/LED.2007.915381
http://hdl.handle.net/11536/9622
ISSN: 0741-3106
DOI: 10.1109/LED.2007.915381
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 3
起始頁: 215
結束頁: 217
顯示於類別:期刊論文


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