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標題: III-V族半導體量子元件研究
Study of Quantum Devices on III-V Compound Semiconductors
作者: 李建平
LEE CHIEN-PING
國立交通大學電子工程研究所
公開日期: 1995
官方說明文件#: NSC84-2215-E009-039
URI: http://hdl.handle.net/11536/96394
https://www.grb.gov.tw/search/planDetail?id=172157&docId=29240
Appears in Collections:Research Plans


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  • 三五族半導體量子結構的物理研究及元件應用 / 李建平;LEE CHIEN-PING
  • 三五族半導體量子點結構之物理與元件 / 李建平;LEE CHIEN-PING
  • Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN multiple quantum wells / Li, J. C.;Lu, T. C.;Huang, H. M.;Chan, W. W.;Kuo, H. C.
  • 三五族半導體分子束磊晶技術及元件研究 / 李建平 
  • 三五族半導體選擇性區域成長在元件上的應用 / 施敏
  • Fully Cu-metallized III-V group compound semiconductor device with palladium/germanium/copper ohmic contact system / CHANG, Edward Yi;Chen, Ke-Shian
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