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dc.contributor.author鄭晃忠en_US
dc.contributor.authorCHENG HUANG-CHUNGen_US
dc.date.accessioned2014-12-13T10:39:27Z-
dc.date.available2014-12-13T10:39:27Z-
dc.date.issued2001en_US
dc.identifier.govdocNSC90-2215-E009-068zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/96498-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=665703&docId=126374en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject多晶矽zh_TW
dc.subject低溫zh_TW
dc.subject載子移動率zh_TW
dc.subject薄膜電晶體zh_TW
dc.subjectPoly-siliconen_US
dc.subjectLow temperatureen_US
dc.subjectCarrier mobilityen_US
dc.subjectThin film transistor (TFT)en_US
dc.title高均勻載子移動率之低溫複晶矽薄膜電晶體研製zh_TW
dc.titleFabrication of Uniform and High Mobility Low Temperaturepoly-Si TFTsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
Appears in Collections:Research Plans


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