高均勻載子移動率之低溫複晶矽薄膜電晶體研製

Full metadata record

DC Field	Value	Language
dc.contributor.author	鄭晃忠	en_US
dc.contributor.author	CHENG HUANG-CHUNG	en_US
dc.date.accessioned	2014-12-13T10:39:27Z	-
dc.date.available	2014-12-13T10:39:27Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-068	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/96498	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665703&docId=126374	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	多晶矽	zh_TW
dc.subject	低溫	zh_TW
dc.subject	載子移動率	zh_TW
dc.subject	薄膜電晶體	zh_TW
dc.subject	Poly-silicon	en_US
dc.subject	Low temperature	en_US
dc.subject	Carrier mobility	en_US
dc.subject	Thin film transistor (TFT)	en_US
dc.title	高均勻載子移動率之低溫複晶矽薄膜電晶體研製	zh_TW
dc.title	Fabrication of Uniform and High Mobility Low Temperaturepoly-Si TFTs	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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