高均勻載子移動率之低溫複晶矽薄膜電晶體研製

標題:	高均勻載子移動率之低溫複晶矽薄膜電晶體研製 Fabrication of Uniform and High Mobility Low Temperaturepoly-Si TFTs
作者:	鄭晃忠 CHENG HUANG-CHUNG 國立交通大學電子工程學系
關鍵字:	多晶矽;低溫;載子移動率;薄膜電晶體;Poly-silicon;Low temperature;Carrier mobility;Thin film transistor (TFT)
公開日期:	2001
官方說明文件#:	NSC90-2215-E009-068
URI:	http://hdl.handle.net/11536/96498 https://www.grb.gov.tw/search/planDetail?id=665703&docId=126374
Appears in Collections:	Research Plans

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