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dc.contributor.authorChu, L. H.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorWu, Y. H.en_US
dc.contributor.authorHuang, J. C.en_US
dc.contributor.authorChen, Q. Y.en_US
dc.contributor.authorChu, W. K.en_US
dc.contributor.authorSeo, H. W.en_US
dc.contributor.authorLee, C. T.en_US
dc.date.accessioned2014-12-08T15:12:34Z-
dc.date.available2014-12-08T15:12:34Z-
dc.date.issued2008-02-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2834849en_US
dc.identifier.urihttp://hdl.handle.net/11536/9654-
dc.description.abstractWe have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm-thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 degrees C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 degrees C for 10 min. Prolonging the annealing to 3 h led to formation of Ga(2)Pt and GaPt(3) phases in InGaP and Schottky diodes degraded after these new phases were observed. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleInterfacial reactions of Pt-based Schottky contacts on nGaPen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2834849en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume92en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000254297300046-
dc.citation.woscount0-
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