Interfacial reactions of Pt-based Schottky contacts on nGaP

doi:10.1063/1.2834849

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chu, L. H.	en_US
dc.contributor.author	Chang, E. Y.	en_US
dc.contributor.author	Wu, Y. H.	en_US
dc.contributor.author	Huang, J. C.	en_US
dc.contributor.author	Chen, Q. Y.	en_US
dc.contributor.author	Chu, W. K.	en_US
dc.contributor.author	Seo, H. W.	en_US
dc.contributor.author	Lee, C. T.	en_US
dc.date.accessioned	2014-12-08T15:12:34Z	-
dc.date.available	2014-12-08T15:12:34Z	-
dc.date.issued	2008-02-25	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2834849	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9654	-
dc.description.abstract	We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm-thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 degrees C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 degrees C for 10 min. Prolonging the annealing to 3 h led to formation of Ga(2)Pt and GaPt(3) phases in InGaP and Schottky diodes degraded after these new phases were observed. (C) 2008 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Interfacial reactions of Pt-based Schottky contacts on nGaP	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2834849	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	92	en_US
dc.citation.issue	8	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000254297300046	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文

文件中的檔案：

000254297300046.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。