完整後設資料紀錄
DC 欄位語言
dc.contributor.author謝宗雍en_US
dc.contributor.authorHSIEH TSUNG-EONGen_US
dc.date.accessioned2014-12-13T10:39:49Z-
dc.date.available2014-12-13T10:39:49Z-
dc.date.issued2001en_US
dc.identifier.govdocNSC90-2216-E009-033zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/96830-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=673266&docId=128266en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject多層基板zh_TW
dc.subject低介電材料zh_TW
dc.subject製備zh_TW
dc.subject材料性質zh_TW
dc.subject高密度zh_TW
dc.subjectMultilayer substrateen_US
dc.subjectLow dielectric materialen_US
dc.subjectPreparationen_US
dc.subjectMaterial propertyen_US
dc.subjectHigh densityen_US
dc.title高密度多層構裝基板與接合材料研究---子計畫III:新型低介電係數材料之製備及其性質研究(III)zh_TW
dc.titlePrreparation of New Low Dielectric Constant Material and Study of Relevant Properties (III)en_US
dc.typePlanen_US
dc.contributor.department國立交通大學材料科學與工程學系zh_TW
顯示於類別:研究計畫