| 標題: | 研製耐放射線/輻射線之半導體基板SOI(II) Fabrication of Rafation-Hardened Soi Substrate(Ⅱ) |
| 作者: | 葉清發 交通大學 |
| 公開日期: | 1994 |
| 官方說明文件#: | NSC83--NSP-O-B-R-DD--009- |
| URI: | http://hdl.handle.net/11536/96969 https://www.grb.gov.tw/search/planDetail?id=119264&docId=19795 |
| 顯示於類別： | 研究計畫 |
- 研製耐輻射/耐放射線之半導體基板SOI(I) / 葉清發
- 耐放射線/輻射線之半導體基板SOI之研製 / 張寶心;葉清發
- 耐放射線/輻射線之半導體基板SOI之研製 / 張寶心;Bao-Shin Chang;葉清發;Ching-Fa Yeh
- Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 mu m CMOSFET with 2-nm thin gate oxide / Yeh, WK;Wang, WH;Fang, YK;Chen, MC;Yang, FL
- On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs / Wang, Sheng-Chun;Su, Pin;Chen, Kun-Ming;Lin, Chien-Ting;Liang, Victor
- 奈米級先進絕緣層上覆矽(SOI)元件研製與分析 / 林鴻志;HORNG-CHIHLIN
- The impact of deep Ni salicidation and NH3 plasma treatment on nano-SOI FinFETs / You, Hsin-Chiang;Kuo, Po-Yi;Ko, Fu-Hsiang;Chao, Tien-Sheng;Lei, Tan-Fu
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