以含氮氧化矽閘極製程製作高穩定度矽金氧半元件

Full metadata record

DC Field	Value	Language
dc.contributor.author	胡振國	en_US
dc.contributor.author	HWU JENN-GWO	en_US
dc.date.accessioned	2014-12-13T10:40:11Z	-
dc.date.available	2014-12-13T10:40:11Z	-
dc.date.issued	1994	en_US
dc.identifier.govdoc	NSC83-0404-E002-018	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/97243	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=109741&docId=17462	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	以含氮氧化矽閘極製程製作高穩定度矽金氧半元件	zh_TW
dc.title	Stable SiMOS Devices with Oxynitride Gate Dielectrics.	en_US
dc.type	Plan	en_US
dc.contributor.department	國立台灣大學電機工程學系	zh_TW
Appears in Collections:	Research Plans