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dc.contributor.author胡振國en_US
dc.contributor.authorHWU JENN-GWOen_US
dc.date.accessioned2014-12-13T10:40:11Z-
dc.date.available2014-12-13T10:40:11Z-
dc.date.issued1994en_US
dc.identifier.govdocNSC83-0404-E002-018zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/97243-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=109741&docId=17462en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title以含氮氧化矽閘極製程製作高穩定度矽金氧半元件zh_TW
dc.titleStable SiMOS Devices with Oxynitride Gate Dielectrics.en_US
dc.typePlanen_US
dc.contributor.department國立台灣大學電機工程學系zh_TW
Appears in Collections:Research Plans