| 標題: | 用於電力元件技術整合及電力電路設計之半導體電力元件模擬 Integration of the Semiconductor Power Device Technology-Processing Technology & Device Modeling for Power Electronic Circuits |
| 作者: | 郭正邦 KUO JAMES B. 國立台灣大學電機工程學系 |
| 公開日期: | 1994 |
| 官方說明文件#: | NSC83-0404-E002-013 |
| URI: | http://hdl.handle.net/11536/97281 https://www.grb.gov.tw/search/planDetail?id=109721&docId=17457 |
| 顯示於類別： | 研究計畫 |
- Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies / Li, Yiming;Hwang, Chih-Hong;Li, Tien-Yeh;Han, Ming-Hung
- Design of Power-Rail ESD Clamp Circuit With Ultra-Low Standby Leakage Current in Nanoscale CMOS Technology / Wang, Chang-Tzu;Ker, Ming-Dou
- Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits / Hwang, Chih-Hong;Li, Tien-Yeh;Han, Ming-Hung;Lee, Kuo-Fu;Cheng, Hui-Wen
- Power-Rail ESD Clamp Circuit With Ultralow Standby Leakage Current and High Area Efficiency in Nanometer CMOS Technology / Yeh, Chih-Ting;Ker, Ming-Dou
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