| 標題: | (In)GaAs/AlGaAs異質接面元件之研究 Studies of (In)GaAs/AlGaAs Heterojunction Devices |
| 作者: | 李嗣涔 LEE SI-CHEN 國立台灣大學電機工程學研究所 |
| 公開日期: | 1994 |
| 官方說明文件#: | NSC83-0404-E002-014 |
| URI: | http://hdl.handle.net/11536/97287 https://www.grb.gov.tw/search/planDetail?id=109725&docId=17458 |
| Appears in Collections: | Research Plans |
- Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs / Chin, A;Liao, CC;Chu, J;Li, SS
- 磷化銦鎵異質接面電晶體及高速電子遷移率電晶體之研究 / 黃忠諤;Chung-Er Huang;李建平;Chien-Ping Lee
- Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application / Hsieh, YC;Chang, EY;Yeh, SS;Chang, CW;Luo, GL
- DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors / Chen, Shu-Han;Chang, Chao-Min;Chiang, Pei-Yi;Wang, Sheng-Yu;Chang, Wen-Hao
- Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces / Chiou, SW;Lee, CP;Hong, JM;Chen, CW;Tsou, Y
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