| 標題: | 金屬表面性質與半導體不穩定性研究 Studies of Metal Surfaces and Instability of Semiconductors |
| 作者: | 鄭以禎 國立台灣大學物理學系 |
| 公開日期: | 1994 |
| 官方說明文件#: | NSC83-0208-M002-027 |
| URI: | http://hdl.handle.net/11536/97336 https://www.grb.gov.tw/search/planDetail?id=91036&docId=13796 |
| Appears in Collections: | Research Plans |
- A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology / Weng, Wu-Te;Lee, Yao-Jen;Lin, Horng-Chih;Huang, Tiao-Yuan
- Impact of the TiN barrier layer on the positive bias temperature instabilities of high-k/metal-gate field effect transistors / Huang, Da-Cheng;Gong, Jeng;Huang, Chih-Fang;Chung, Steve S.
- A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO(2)/poly-gate complementary metal oxide semiconductor technology / Weng, Wu-Te;Lee, Yao-Jen;Lin, Horng-Chih;Huang, Tiao-Yuan
- Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain / Lu, CY;Lin, HC;Chang, YF;Huang, TY
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