Title: | Cross-sectional transmission electron microscopy observations of structural damage in Al(0.16)Ga(0.84)N thin film under contact loading |
Authors: | Jian, Sheng-Rui Juang, Jenh-Yih Lai, Yi-Shao 電子物理學系 Department of Electrophysics |
Issue Date: | 1-Feb-2008 |
Abstract: | This article reports a nanomechanical response study of the contact-induced deformation behavior in Al(0.16)Ga(0.84)N thin film by means of a combination of nanoindentation and the cross-sectional transmission electron microscopy (XTEM) techniques. Al(0.16)Ga(0.84)N thin film is deposited by using the metal-organic chemical vapor deposition method. Hardness and Young's modulus of the Al(0.16)Ga(0.84)N films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements mode. The obtained values of the hardness and Young's modulus are 19.76 +/- 0.15 and 310.63 +/- 9.41 GPa, respectively. The XTEM images taken in the vicinity just underneath the indenter tip revealed that the multiple "pop-ins" observed in the load-displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of the load-displacement curve suggests that no pressure-induced phase transition was involved. (c) 2008 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2836939 http://hdl.handle.net/11536/9737 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.2836939 |
Journal: | JOURNAL OF APPLIED PHYSICS |
Volume: | 103 |
Issue: | 3 |
End Page: | |
Appears in Collections: | Articles |
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