矽基板上之高效率低成本InGaN/GaN多重量子井發光二極體

Abstract

本計畫目標在於以使用MBE和MOCVD成長最佳化磊晶結構，在矽基板上成長的氮化銦鎵/氮化鎵多重量子井發光二極體，並將成長參數調變至最佳化。其目的在於實現高效率，低成本的氮化鎵（GaN）發光二極體，可有效解決能源問題。本計畫將由印度理工學院及國立交通大學共同開發完成。

The goal will be achieved in phased manner as follows: Simulation of the InGaN/GaN multijunction LEDs to optimize the device structure; Grow the InGaN /GaN Multiple Junction (MJ) LEDs using novel growth techniques using MBE and MOCVD; Grow the same device on Silicon substrate; Optimization of the device process based on the epi-design. Techniques to accomplish the growth: Novel growth interruption; Optimization of Nucleation layers; Optimization of Hydrogen environment in the growth process; Optimization of the gas flow ratio for stricter accuracy in fine Multiple Junction (MJ) structure; Optimization of differential growth temperature depending on micro/nano growth. The outcome of the project is the high efficient and low cost Gallium Nitride (GaN) LEDs, which will solve the energy problem and help to achieve the goal of sustainable development. This work will be accomplished collaboratively between Indian Institute Technology, Kharagpur, India & National Chiao Tung University, Hsinchu , Taiwan.