标题: 矽奈米电子元件于生医感测研究
A Study of Silicon Nanodevices as Biosensors
作者: 许钲宗
Sheu Jeng Tzong
国立交通大学材料科学与工程学系(所)
关键字: 癌症早期快筛系统;延伸式环绕闸极矽奈米线电晶体;延伸式环绕闸极矽二极
体;介电泳;电渗流;多工分析癌症早期快筛系统;early diagnosis;gate-all-around SiNW-FET;nanowire Schottky diode;extended
gate;prostate cancer;PSA;PAP
公开日期: 2014
摘要: 本计画拟建立一即时、灵敏与准确的癌症早期快筛系统。奈米线场效应电晶体虽具有高
灵敏度、即时侦测、多样性标记分子量测、可携式等多项优点。但由于奈米线侦测时其
元件通道(device active channel)裸露于检体之中,非常容易受检体中带电物质干扰,而奈
米线表面未充分遮蔽或修饰的部分也极易与检体中的物质作用或受其干扰,造成电性扰
动,降低极低浓度应用的侦测灵敏度(Sensitivity)与准确性(Selectivity)。本计画第一年将
运用标准半导体制程,开发延伸式环绕闸极矽奈米线电晶体,元件结构是将奈米线的侦
测闸极外移,形成延伸闸极结构(extended gate, EG),使检体与奈米线元件通道分开,降
低analye 的直接干扰。另外延伸闸极以环绕式(Gate-all-around)闸极包覆奈米线,使奈米
线通道四周均受闸极电位改变的影响,以提升其灵敏度。元件完成后以Biotin-Steptavidin
先验证侦测之可行,之后再分别检测摄护腺特异抗原(Prostate Specific Antigen, PSA)与
摄护腺酸性磷酸灯(Prostatic acid phosphatase, PAP)两个癌症标志分子,验证元件之工作
特性。本计画第二年将研制延伸式环绕闸极矽奈米线二极体,主要因是二极体电流对表
面电位的改变呈指数放大关系;奈米线二极体除了本身具有奈米线的优点外,因萧特基
能障的调变,使得生医检测目标因固定或吸覆于元件延伸闸极表面时,电性有更明显的
变化。另外、计画第二年也将设计交流电渗流(AC ElectroOsmosis, ACEO)电极,并制作
于延伸闸极附近,用以集中并扰动待测溶液中之生物标记,在极低浓度侦测时提升target
molecules 与延伸闸极表面probe molecules 之碰撞与作用,降低侦测浓度极限与侦测所
需的时间。根据目前临床研究资料显示,单一癌症标记分子检测对相关疾病检出的准确
度相当有限,本研究第三年中将整合前两年研究结果,建立并验证多工早期癌症快筛系
统,即时侦测摄护腺特异抗原(Prostate Specific Antigen, PSA)与摄护腺酸性磷酸灯
(Prostatic acid phosphatase, PAP)两个癌症标志分子,达成即时且同时分析multiple 癌症
标记分子侦测的目的。
The early diagnosis of cancer is crucial for patient survival and prognosis; therefore, a
real-time, highly sensitive and specific biosensor system is required for early cancer diagnosis.
In spite that silicon nanowire (SiNW) FETs own many properties in biomedical sensing
applications, interferences from the unblocked surface of SiNWs and exposure of device
active channel in the analyte undermine its deploy in very low concentration detection. In the
first year of this proposal, a gate-all-around (GAA) SiNW-FET with an extended-gate
structure is proposed for biosensing. Due to the sensing area is replaced by the extended gate
in stead of the active channel of SiNW, the interferences is expected to be reduced. Also, in
the proposed device, the SiNW is surrounded by gate so that field-effect resulted from binding
on the surface of extended gate is expected to be significant compared to its SiNW
counterpart. In the second year of this study, a nanowire Schottky diode with an extended gate
will be investigated. The active channel now is replaced by a metal/Si Schottky barrier such
that the change of surface potential, resulted from biding of specific bindings on the extended
gate, will be amplified exponentially. Two prostatic cancer markers prostate specific antigen
(PSA) and prostatic acid phosphatase (PAP) will be investigated respectively on these
nanowire devices in the first two years. To increase the binding efficiency and probability of
collision between probes (antibody) and target molecules, AC ElectroOsmosis (ACEO)
electrodes will also be fabricated near the extended gate for very low-concentration detection
application. In the third year, array of GAA SiNW FETs with extended gate and array of
nanowire diodes with extended gate with be investigated for simultaneous detection of PSA
and PAP with a home-made multi-channel data acquisition system for prostate cancer in
control buffer environment.
官方说明文件#: NSC101-2221-E009-071-MY3
URI: http://hdl.handle.net/11536/97939
https://www.grb.gov.tw/search/planDetail?id=8122269&docId=432834
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