| 標題: | 鐵電DRAM/PROM記憶胞之研製及其元件/電路之模擬分析 Preparation of Ferroelectric DRAM/EPROM Cells and Simulation |
| 作者: | 林鵬 LIN PANG 交通大學材料科學工程研究所 |
| 公開日期: | 1993 |
| 官方說明文件#: | NSC82-0404-E009-394 |
| URI: | http://hdl.handle.net/11536/97999 https://www.grb.gov.tw/search/planDetail?id=46062&docId=6610 |
| Appears in Collections: | Research Plans |
- CHARGE LOSS DUE TO AC PROGRAM DISTURBANCE STRESSES IN EPROMS / LIN, JK;CHANG, CY;WANG, TH;HUANG, HS;CHEN, KL
- INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION / WANG, CK;YING, TL;WEI, CS;LIU, LM
- Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application / Lin, M;Chang, CY;Huang, TY;Shieh, WY
- Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric / Cheng, Chun-Hu;Chin, Albert
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