| 標題: | 次微米元件可靠性量測技術整合及其應用 Characterization Integration for Submicron Device Reliability and Its Applications |
| 作者: | 陳明哲 國立交通大學電子研究所 |
| 公開日期: | 1993 |
| 官方說明文件#: | NSC82-0404-E009-232 |
| URI: | http://hdl.handle.net/11536/98023 https://www.grb.gov.tw/search/planDetail?id=45948&docId=6595 |
| Appears in Collections: | Research Plans |
- A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET's / Chung, SS;Yang, JJ
- Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application / Cheng, YL;Wang, YL;Liu, CW;Wu, YL;Lo, KY
- An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's / Chung, SS;Chen, SJ;Yih, CM;Yang, WJ;Chao, TS
- TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET / GUO, JC;CHANG, MC;LU, CY;HSU, CCH;CHUNG, SSS
- A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damage / Yih, CM;Cheng, SM;Chung, SS
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