完整後設資料紀錄
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dc.contributor.author洪紹剛en_US
dc.contributor.authorHung Shao-Kangen_US
dc.date.accessioned2014-12-13T10:41:07Z-
dc.date.available2014-12-13T10:41:07Z-
dc.date.issued2012en_US
dc.identifier.govdocNSC101-2221-E009-017zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/98225-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2580885&docId=388575en_US
dc.description.abstract快速原型 (rapid prototype, RP) 是一種成熟的技術,廣泛地運用在各種產業。傳統 的快速原型機最好的橫向解析度約在數十微米。本計畫的目的是利用原子力顯微鏡 (atomic force microscopy, AFM) 為基礎的浸筆微刻法 (dip-pen lithography) 發展超高解 析度的三維快速原型技術,橫向解析度由原子力顯微鏡探針針尖 (~10nm) 決定。既有 的浸筆微刻法通常以化學方法結合基材與墨料,但無法堆疊墨料,故僅能製作單層二維 圖形。本計畫第一年專注在二維小面積的 (~5050 m2) 工作項目,追求橫向解析度的 極限。第二年專注在三維立體結構,探討不同的材料與結合方法實現多層疊合。第三年 的工作項目是大面積 (~5050 mm2) 立體結構製作,追求實際的應用價值,例如超細線 寬 (~20nm) 光罩與圖案化藍寶石基板 (pattern sapphire substrate, PSS)。zh_TW
dc.description.abstractRapid prototype (RP) is a mature technology and plays an important role in various industrials. The best resolution of a traditional RP machine is tens of micrometers. The purpose of this project is to develop an ultra high resolution 3-dimesional RP technology, which is based on atomic force microscopy (AFM) and dip-pen lithography. Its lateral resolution is determined by the tip size (~10nm) of an AFM probe. Traditional dip-pen lithography uses chemical methods to combine the substrate and the ink material, but the same chemical reaction can’t be applied between layers of ink material. Therefore, traditional dip-pen lithography can only fabricate single layer structure. In the first year, this project focuses on pushing the lateral resolution to limit. The working area is defined within 5050 m2 with a single layer structure. In the second year, the goal is to fabricate 3-dimesional structures. Various materials and combining methods will be surveyed in order to realize multi-layer stacking. In the third year, the working area is defined at 5050 mm2 with multi-layer structures. Real applications, such as thin-line (~20nm) photolithography mask and pattern sapphire substrate (PSS), will be chased.en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject快速原型zh_TW
dc.subject原子力顯微術zh_TW
dc.subject浸筆微刻zh_TW
dc.subject光機電系統zh_TW
dc.subjectrapid prototypeen_US
dc.subjectatomic force microscopyen_US
dc.subjectdip-pen lithographyen_US
dc.subjectopto-mechatronicsen_US
dc.title微奈米快速原型zh_TW
dc.titleMicro/Nano Rapid Prototypeen_US
dc.typePlanen_US
dc.contributor.department國立交通大學機械工程學系(所)zh_TW
顯示於類別:研究計畫