Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor

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DC Field	Value	Language
dc.contributor.author	Shyu, SG	en_US
dc.contributor.author	Wu, JS	en_US
dc.contributor.author	Chuang, SH	en_US
dc.contributor.author	Chi, KM	en_US
dc.contributor.author	Sung, YS	en_US
dc.date.accessioned	2014-12-08T15:02:17Z	-
dc.date.available	2014-12-08T15:02:17Z	-
dc.date.issued	1996-10-07	en_US
dc.identifier.issn	1359-7345	en_US
dc.identifier.uri	http://dx.doi.org/10.1039/cc9960002239	en_US
dc.identifier.uri	http://hdl.handle.net/11536/982	-
dc.description.abstract	A single-phase polycrystalline mixed-metal oxide WCoO4 film on Si(100) can be prepared by MOCVD with the use of [(eta-C5H5)(CO)(3)WCo(CO)(4)] as a single-source precursor.	en_US
dc.language.iso	en_US	en_US
dc.title	Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1039/cc9960002239	en_US
dc.identifier.journal	CHEMICAL COMMUNICATIONS	en_US
dc.citation.volume		en_US
dc.citation.issue	19	en_US
dc.citation.spage	2239	en_US
dc.citation.epage	2240	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:A1996VM02300010	-
dc.citation.woscount	7	-
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