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學術出版;;Publications
研究計畫;;Research Plans
利用MOCVD製備高介電閘極材料之研究
利用MOCVD製備高介電閘極材料之研究
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902215E009117.pdf
(350.28 KB)
902215E009117.pdf
(350.28 KB)
Date
2001
Authors
趙天生
TIEN-SHENGCHAO
Journal Title
Journal ISSN
Volume Title
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Abstract
Description
Keywords
有機金屬化學氣相沈積法
,
高介電閘
,
製備
,
MOCVD
,
High dielectric gate
,
Formation
Citation
URI
https://www.grb.gov.tw/search/planDetail?id=665840&docId=126409
https://ir.lib.nycu.edu.tw/handle/11536/94576
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