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dc.contributor.authorChen, Jun-Rongen_US
dc.contributor.authorLee, Chung-Hsienen_US
dc.contributor.authorKo, Tsung-Shineen_US
dc.contributor.authorChang, Yi-Anen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorKuo, Yen-Kuangen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:12:48Z-
dc.date.available2014-12-08T15:12:48Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn0733-8724en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JLT.2007.909908en_US
dc.identifier.urihttp://hdl.handle.net/11536/9864-
dc.description.abstractEffects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been numerically investigated by employing an advanced device-simulation program. The simulation results indicate that the characteristics of InGaN quantum-well lasers can be improved by using the quaternary AlInGaN EBL. When the aluminum and indium compositions in the AlInGaN EBL are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN EBL can be reduced. Under this circumstance, the electron leakage current and the laser threshold current can obviously be decreased as compared with the laser structure with a conventional AlGaN EBL when the built-in polarization is taken into account in the calculation. Furthermore, the AlInGaN EBL also gives a higher refractive index than the AlGaN EBL, which is a benefit for a higher quantum-well optical confinement factor in laser operations.en_US
dc.language.isoen_USen_US
dc.subjectAlInGaNen_US
dc.subjectelectronic blocking layer (EBL)en_US
dc.subjectInGaNen_US
dc.subjectnumerical simulationen_US
dc.subjectsemiconductor lasersen_US
dc.titleEffects of built-in polarization and carrier overflow on InGaN quantum-well lasers with electronic blocking layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JLT.2007.909908en_US
dc.identifier.journalJOURNAL OF LIGHTWAVE TECHNOLOGYen_US
dc.citation.volume26en_US
dc.citation.issue1-4en_US
dc.citation.spage329en_US
dc.citation.epage337en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000253391500040-
dc.citation.woscount29-
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