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dc.contributor.authorLee, C. E.en_US
dc.contributor.authorKuo, H. C.en_US
dc.contributor.authorLee, Y. C.en_US
dc.contributor.authorTsai, M. R.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.contributor.authorKuo, C. T.en_US
dc.date.accessioned2014-12-08T15:12:49Z-
dc.date.available2014-12-08T15:12:49Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2007.912990en_US
dc.identifier.urihttp://hdl.handle.net/11536/9878-
dc.description.abstractThe flip-chip light-emitting diodes (FC-LEDs) with geometric sapphire shaping structure were investigated. The sapphire shaping structure was formed on the. bottom side of the sapphire substrate by a chemical wet etching technique for light extraction purpose. The crystallography-etched facets were (1010) M-plane, (1102) R-plane, and (1120) A-plane against the (0001) c-axis with the angles range between 29 degrees similar to 60 degrees. These large slope oblique sidewalls are useful for light extraction efficiency enhancement. The light-output power of sapphire shaping FC-LEDs was increased 55% (at 350-mA current injection) compared to that of conventional FC-LEDs.en_US
dc.language.isoen_USen_US
dc.subjectflip-chip light-emitting diodes (FC-LEDs)en_US
dc.subjectgeometric sapphire shapingen_US
dc.subjectoblique sidewallen_US
dc.subjectsapphire wet etchingen_US
dc.titleLuminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2007.912990en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume20en_US
dc.citation.issue1-4en_US
dc.citation.spage184en_US
dc.citation.epage186en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000253225300059-
dc.citation.woscount16-
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