Raman scattering in ternary AlAsxSb1-x films

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DC 欄位	值	語言
dc.contributor.author	Lin, HC	en_US
dc.contributor.author	Ou, J	en_US
dc.contributor.author	Hsu, CH	en_US
dc.contributor.author	Chen, WK	en_US
dc.contributor.author	Lee, MC	en_US
dc.date.accessioned	2014-12-08T15:01:12Z	-
dc.date.available	2014-12-08T15:01:12Z	-
dc.date.issued	1998	en_US
dc.identifier.issn	0038-1098	en_US
dc.identifier.uri	http://hdl.handle.net/11536/98	-
dc.description.abstract	Thin films of the ternary AlAsxSb1-x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E-0 and E-1 transitions of AlAs and AlSb. (C) 1998 Elsevier Science Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	semiconductors	en_US
dc.subject	thin films	en_US
dc.subject	optical properties	en_US
dc.subject	phonons	en_US
dc.title	Raman scattering in ternary AlAsxSb1-x films	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID STATE COMMUNICATIONS	en_US
dc.citation.volume	107	en_US
dc.citation.issue	10	en_US
dc.citation.spage	547	en_US
dc.citation.epage	551	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000075136100006	-
dc.citation.woscount	6	-
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