偏壓法於非導體基材成長磊晶鑽石之研究(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	張立	en_US
dc.contributor.author	CHANG LI	en_US
dc.date.accessioned	2014-12-13T10:42:13Z	-
dc.date.available	2014-12-13T10:42:13Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2216-E009-006	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/99028	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=536593&docId=98403	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	磊晶	zh_TW
dc.subject	鑽石	zh_TW
dc.subject	Epitaxial growth	en_US
dc.subject	Diamond	en_US
dc.title	偏壓法於非導體基材成長磊晶鑽石之研究(II)	zh_TW
dc.title	Epitaxial Growth of Diamond on Nonconductive Substrates by Biasing Enhanced Method(II)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程研究所	zh_TW
Appears in Collections:	Research Plans

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