偏壓法於非導體基材成長磊晶鑽石之研究

Title:	偏壓法於非導體基材成長磊晶鑽石之研究 Epitaxial Growth of Diamond on Nonconductive Substrates by Bias Method
Authors:	張立 CHANG LI 交通大學材料科學與工程研究所
Keywords:	射頻偏壓;磊晶成長;微波;電漿;Radio frequency bias;Epitaxial growth;Microwave;Plasma
Issue Date:	1999
Gov't Doc #:	NSC88-2216-E009-019
URI:	http://hdl.handle.net/11536/94208 https://www.grb.gov.tw/search/planDetail?id=444249&docId=80453
Appears in Collections:	Research Plans

APA	張., & CHANG L. (1999). 偏壓法於非導體基材成長磊晶鑽石之研究. https://www.grb.gov.tw/search/planDetail?id=444249&docId=80453.
Bibtex	@article{1999, title={偏壓法於非導體基材成長磊晶鑽石之研究}, author={張立 and CHANG LI}, journal={https://www.grb.gov.tw/search/planDetail?id=444249&docId=80453}, year={1999}, url={https://ir.lib.nycu.edu.tw/handle/11536/94208}, }