偏壓法於非導體基材成長磊晶鑽石之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	張立	en_US
dc.contributor.author	CHANG LI	en_US
dc.date.accessioned	2014-12-13T10:36:50Z	-
dc.date.available	2014-12-13T10:36:50Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2216-E009-019	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94208	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444249&docId=80453	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	射頻偏壓	zh_TW
dc.subject	磊晶成長	zh_TW
dc.subject	微波	zh_TW
dc.subject	電漿	zh_TW
dc.subject	Radio frequency bias	en_US
dc.subject	Epitaxial growth	en_US
dc.subject	Microwave	en_US
dc.subject	Plasma	en_US
dc.title	偏壓法於非導體基材成長磊晶鑽石之研究	zh_TW
dc.title	Epitaxial Growth of Diamond on Nonconductive Substrates by Bias Method	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學材料科學與工程研究所	zh_TW
顯示於類別：	研究計畫