偏壓法於非導體基材成長磊晶鑽石之研究(II)

標題:	偏壓法於非導體基材成長磊晶鑽石之研究(II) Epitaxial Growth of Diamond on Nonconductive Substrates by Biasing Enhanced Method(II)
作者:	張立 CHANG LI 交通大學材料科學與工程研究所
關鍵字:	磊晶;鑽石;Epitaxial growth;Diamond
公開日期:	2000
官方說明文件#:	NSC89-2216-E009-006
URI:	http://hdl.handle.net/11536/99028 https://www.grb.gov.tw/search/planDetail?id=536593&docId=98403
Appears in Collections:	Research Plans

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