Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Tsai, Chih-Hao | en_US |
dc.contributor.author | Chen, Kuan-Jung | en_US |
dc.contributor.author | Pan, Fu-Ming | en_US |
dc.contributor.author | Lo, Hsiang-Yu | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Chiang, Mei-Chao | en_US |
dc.contributor.author | Mo, Chi-Neng | en_US |
dc.date.accessioned | 2014-12-08T15:12:51Z | - |
dc.date.available | 2014-12-08T15:12:51Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9905 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.2988646 | en_US |
dc.description.abstract | Nanogaps were prepared on the Pd line electrode by focused ion beam, and electron field-emission characteristics of the Pd nanogap emitter subject to hydrogen plasma treatment were studied. The as-prepared nanogap had smooth and uniform gap edges, and thus field-emission characteristics of the nanogap emitter were primarily dependent on the gap separation. After the hydrogen plasma treatment, the field-emission property of the Pd nanogap emitter was significantly enhanced. The improvement in the field-emission property was mainly attributed to formation of a ragged morphology on the nanogap emitter during the hydrogen plasma treatment. The ragged morphology provided more emitting sites with a high field enhancement factor. The Fowler-Nordheim plot was used to elucidate the dependence of field-emission characteristics of the Pd nanogap emitter on the plasma-induced ragged morphology. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2988646] All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of Hydrogen Plasma Treatment on Field-Emission Characteristics of Palladium Nanogap Emitters | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.2988646 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 155 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | J361 | en_US |
dc.citation.epage | J364 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000260479700086 | - |
dc.citation.woscount | 2 | - |
Appears in Collections: | Articles |
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