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dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorChen, Kuan-Jungen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChiang, Mei-Chaoen_US
dc.contributor.authorMo, Chi-Nengen_US
dc.date.accessioned2014-12-08T15:12:51Z-
dc.date.available2014-12-08T15:12:51Z-
dc.date.issued2008en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/9905-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2988646en_US
dc.description.abstractNanogaps were prepared on the Pd line electrode by focused ion beam, and electron field-emission characteristics of the Pd nanogap emitter subject to hydrogen plasma treatment were studied. The as-prepared nanogap had smooth and uniform gap edges, and thus field-emission characteristics of the nanogap emitter were primarily dependent on the gap separation. After the hydrogen plasma treatment, the field-emission property of the Pd nanogap emitter was significantly enhanced. The improvement in the field-emission property was mainly attributed to formation of a ragged morphology on the nanogap emitter during the hydrogen plasma treatment. The ragged morphology provided more emitting sites with a high field enhancement factor. The Fowler-Nordheim plot was used to elucidate the dependence of field-emission characteristics of the Pd nanogap emitter on the plasma-induced ragged morphology. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.2988646] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffects of Hydrogen Plasma Treatment on Field-Emission Characteristics of Palladium Nanogap Emittersen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2988646en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume155en_US
dc.citation.issue12en_US
dc.citation.spageJ361en_US
dc.citation.epageJ364en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000260479700086-
dc.citation.woscount2-
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