Temperature dependence of excitonic emission in cubic CdSe thin film

doi:10.1016/j.jlumin.2007.06.003

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chia, C. H.	en_US
dc.contributor.author	Yuan, C. T.	en_US
dc.contributor.author	Ku, J. T.	en_US
dc.contributor.author	Yang, S. L.	en_US
dc.contributor.author	Chou, W. C.	en_US
dc.contributor.author	Juang, J. Y.	en_US
dc.contributor.author	Hsieh, S. Y.	en_US
dc.contributor.author	Chiu, K. C.	en_US
dc.contributor.author	Hsu, J. S.	en_US
dc.contributor.author	Jeng, S. Y.	en_US
dc.date.accessioned	2014-12-08T15:12:52Z	-
dc.date.available	2014-12-08T15:12:52Z	-
dc.date.issued	2008-01-01	en_US
dc.identifier.issn	0022-2313	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.jlumin.2007.06.003	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9919	-
dc.description.abstract	A detailed photoluminescence investigation of the thermal redshift and broadening of the excitonic line of cubic CdSe film grown by molecular beam epitaxy is presented. Free excitonic emission from the cubic Use film was observed at low temperature. Temperature-dependent measurement was performed to obtain material parameters related to exciton-phonon interaction by fitting the experimental data to the phenomenological model. The relative contribution of both acoustic and optical phonon to the band gap shrinkage and exciton linewidth broadening are discussed. Exciton binding energy of 16 +/- 1.5 meV was determined from the Arrhenius analysis. (C) 2007 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	photoluminescence	en_US
dc.subject	cadmium selenide	en_US
dc.subject	temperature dependence	en_US
dc.subject	thin film	en_US
dc.subject	exciton-phonon interaction	en_US
dc.subject	Exciton binding energy	en_US
dc.title	Temperature dependence of excitonic emission in cubic CdSe thin film	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.jlumin.2007.06.003	en_US
dc.identifier.journal	JOURNAL OF LUMINESCENCE	en_US
dc.citation.volume	128	en_US
dc.citation.issue	1	en_US
dc.citation.spage	123	en_US
dc.citation.epage	128	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000250280600020	-
dc.citation.woscount	8	-
顯示於類別：	期刊論文

文件中的檔案：

000250280600020.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。