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dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2014-12-08T15:12:52Z-
dc.date.available2014-12-08T15:12:52Z-
dc.date.issued2008en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/9925-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2917808en_US
dc.description.abstractHigh-performance indium arsenic (InAs) channel-based quantum well field-effect transistors (QWFETs) have been fabricated. A superior drain-source current density of 1015 mA/mm was achieved, with a high transconductance of 1900 mS/mm when the drain (V(DS)) was biased at 0.5 V. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 393 and 260 GHz, respectively. A very low gate delay of 0.54 ps was also achieved at a 0.5 V drain bias. Compared to a silicon n-channel metal-oxide semiconductor field-effect transistor, the QWFETs exhibited a better radio-frequency performance with lower dc power consumption, which indicates the great potential for high-speed and low-voltage digital applications. (C) 2008 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleInAs channel-based quantum well transistors for high-speed and low-voltage digital applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2917808en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume11en_US
dc.citation.issue7en_US
dc.citation.spageH193en_US
dc.citation.epageH196en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000255982800026-
dc.citation.woscount7-
Appears in Collections:Articles