完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 陳冠能 | en_US |
dc.contributor.author | CHEN KUAN-NENG | en_US |
dc.date.accessioned | 2014-12-13T10:42:40Z | - |
dc.date.available | 2014-12-13T10:42:40Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.govdoc | NSC100-2628-E009-010 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/99309 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=2360021&docId=373806 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 三維積體電路晶片 | zh_TW |
dc.subject | 矽穿孔 | zh_TW |
dc.subject | 晶圓薄化 | zh_TW |
dc.subject | 晶圓接合 | zh_TW |
dc.subject | 異質接合 | zh_TW |
dc.subject | 金屬接合 | zh_TW |
dc.subject | 附著層 | zh_TW |
dc.subject | 3D IC | en_US |
dc.subject | TSV | en_US |
dc.subject | wafer thinning | en_US |
dc.subject | wafer bonding | en_US |
dc.subject | hybrid bonding | en_US |
dc.subject | metal bonding | en_US |
dc.subject | adhesion layer | en_US |
dc.title | 三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析( II ) | zh_TW |
dc.title | Studies of through Silicon VI a (Tsv) and Other Key Technologies in Three-Dimensional Integrated Circuit (3d Ic) with Stress Analysis and Thermal Conductivity Modeling | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系及電子研究所 | zh_TW |
顯示於類別: | 研究計畫 |