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dc.contributor.author陳冠能en_US
dc.contributor.authorCHEN KUAN-NENGen_US
dc.date.accessioned2014-12-13T10:42:40Z-
dc.date.available2014-12-13T10:42:40Z-
dc.date.issued2011en_US
dc.identifier.govdocNSC100-2628-E009-010zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/99309-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=2360021&docId=373806en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject三維積體電路晶片zh_TW
dc.subject矽穿孔zh_TW
dc.subject晶圓薄化zh_TW
dc.subject晶圓接合zh_TW
dc.subject異質接合zh_TW
dc.subject金屬接合zh_TW
dc.subject附著層zh_TW
dc.subject3D ICen_US
dc.subjectTSVen_US
dc.subjectwafer thinningen_US
dc.subjectwafer bondingen_US
dc.subjecthybrid bondingen_US
dc.subjectmetal bondingen_US
dc.subjectadhesion layeren_US
dc.title三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析( II )zh_TW
dc.titleStudies of through Silicon VI a (Tsv) and Other Key Technologies in Three-Dimensional Integrated Circuit (3d Ic) with Stress Analysis and Thermal Conductivity Modelingen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
顯示於類別:研究計畫