标题: | 硫族合金奈米复合薄膜于非挥发性浮动闸极记忆体及氢气感测器之应用研究 A Study on Chalcogenide Nanocomposites Applied to Nonvolatile Floating Gate Memory and Hydrogen Gas Sensor |
作者: | 谢宗雍 HSIEH TSUNG-EONG 国立交通大学材料科学与工程学系(所) |
关键字: | 硫族合金;奈米复合薄膜;非挥发性浮动闸极记忆体。;Chalcogenide;Nanocompoiste Layer;Nonvolatile Floating Gate Memory. |
公开日期: | 2011 |
摘要: | 本计画拟研究含硫族合金之奈米复合薄膜在化合物在非挥发性浮动闸极记忆体 (Nonvolatile Floating Gate Memory,NFGM)及氢气感测器之应用。先期研究显示,以 溅镀法可制成含硫族合金奈米晶之复合薄膜,其可取代IV 族半导体或过渡金属之奈米 晶做为NFGM 元件中之电荷捕捉位置,其不仅可降低后热处理温度与时间,并可简化 元件制程与结构;先期研究亦发现硫族合金奈米复合薄膜具备靈敏之氢气感测性质,其 毋须复杂之化学制程与贵金属催化物,并可整合于CMOS 制程,这兩项极具潜力之应 用在学理与制程均有许多待厘清与改善之处,故提出本计划研究之,期能为硫族合金开 启新颖之应用領域。 本计划第一年除以先期研究为基础,完成含硫族合金奈米复合薄膜在 NFGM 元件 应用特性与微观结构分析,并建立最佳化之元件结构与制程方法之外,并将完成气体反 应测试系统与即时拉曼光谱仪之建置,以供后续研究分析之用。第二年将以前一年建立 完成之各种硫族合金奈米复合薄膜制成CMOS 结构与商用MOS 感测元件,并完成其气 体感测能力与反应机制,以奠立硫族合金气体感测器元件之开发基础。硫族合金与其奈 米复合薄膜之组成与对不同气体之感测能力将一并研究之,以完整了解其气体感测性质 及相关之学理知識。 This project intends to explore the applicability of nanocomposite thin films containing nano-scale chalcogenides to nonvolatile floating gate memory (NFGM) and hydrogen sensor. Preliminary study found that the chalcogenide nanocrystals (NCs) embedded in the matrix of nanocomposite may serve as the charge trapped sites of NFGM devices. In addition to reduce the temperature and time span of post annealing, the utilization of such a nanocomposite may be an alternative to semiconductor and transition metal NCs so as to simplify the NFGM fabrication and device structure. A high sensitivity to hydrogen gas of chalcogenide nanocomposite was also observed in preliminary study. The fabrication of chalcogenide nanocomposite is compatible to present CMOS process and avoid the usage of complicated chemical process and noble-metal catalysts. Since both the fundamental knowledge and applicability of chalcogenide nanocomposite remains to be explored, we hence propose this project in order to implant new application era for chalcogenides. In first year of study, the application properties of chalcogenide nanocomposites to NFGM and relevant microstructure evolution in devices will be investigated on the basis of preliminary study. A gas sensitivity measurement system and a real-time Raman spectroscopy will be also established for subsequent research. In second year, the chalcogenide nanocomposites prepared in first year will be incorporated in CMOS structure to realize its commercial applications. The sensing capability to various types of gases, the effect of constitution of chalcogenides and their nanocomposites to sensing characteristics and the gas reacting mechanisms will also be analyzed so that a full understanding on the gas sensing theories and applicability of chalcogenide nanocomposites can be secured. |
官方说明文件#: | NSC100-2221-E009-054-MY2 |
URI: | http://hdl.handle.net/11536/99319 https://www.grb.gov.tw/search/planDetail?id=2345367&docId=370178 |
显示于类别: | Research Plans |