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dc.contributor.authorLin, Chih-Hengen_US
dc.contributor.authorHsiao, Cheng-Yunen_US
dc.contributor.authorHung, Cheng-Hsiungen_US
dc.contributor.authorLo, Yen-Renen_US
dc.contributor.authorLee, Cheng-Cheen_US
dc.contributor.authorSu, Chun-Jungen_US
dc.contributor.authorLin, Horng-Chinen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.date.accessioned2014-12-08T15:12:54Z-
dc.date.available2014-12-08T15:12:54Z-
dc.date.issued2008en_US
dc.identifier.issn1359-7345en_US
dc.identifier.urihttp://hdl.handle.net/11536/9940-
dc.identifier.urihttp://dx.doi.org/10.1039/b812968aen_US
dc.description.abstractAn unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.en_US
dc.language.isoen_USen_US
dc.titleUltrasensitive detection of dopamine using a polysilicon nanowire field-effect transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1039/b812968aen_US
dc.identifier.journalCHEMICAL COMMUNICATIONSen_US
dc.citation.issue44en_US
dc.citation.spage5749en_US
dc.citation.epage5751en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.department生物科技學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000260889800021-
dc.citation.woscount39-
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