Skip to main content
Communities & Collections
All of DSpace
Statistics
English
العربية
বাংলা
Català
Čeština
Deutsch
Ελληνικά
Español
فارسی
Suomi
Français
Gàidhlig
ગુજરાતી
हिंदी
Magyar
Italiano
Қазақ
Latviešu
മലയാളം
मराठी
Nederlands
ଓଡିଆ
Polski
Português
Português do Brasil
Русский
Srpski (lat)
Српски
Svenska
తెలుగు
தமிழ்
Türkçe
Yкраї́нська
Tiếng Việt
繁体中文
Log In
Log in
New user? Click here to register.
Have you forgotten your password?
Home
學術出版;;Publications
研究計畫;;Research Plans
以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發
以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發
Loading...
Files
1002221E009034.PDF
(4.03 MB)
Date
2011
Authors
徐文祥
HSU WENSYANG
Journal Title
Journal ISSN
Volume Title
Publisher
DOI
Abstract
Description
Keywords
感應耦合電漿
,
乾蝕刻
,
高分子
,
保護層
,
懸浮
,
單晶矽
,
ICP
,
dry etching
,
polymer
,
passivation
,
suspended
,
SCS
Citation
URI
https://www.grb.gov.tw/search/planDetail?id=2328558&docId=365245
https://ir.lib.nycu.edu.tw/handle/11536/99658
Collections
研究計畫;;Research Plans
Endorsement
Review
Supplemented By
Referenced By
Full item page