新穎二六族氧化物半導體之成長與光電特性研究

Full metadata record

DC Field	Value	Language
dc.contributor.author	林彥丞	en_US
dc.contributor.author	Lin Yan-Cheng	en_US
dc.date.accessioned	2014-12-13T10:43:23Z	-
dc.date.available	2014-12-13T10:43:23Z	-
dc.date.issued	2013	en_US
dc.identifier.govdoc	NSC102-2112-M009-001-MY2	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/99728	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=3111980&docId=422392	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新穎二六族氧化物半導體之成長與光電特性研究	zh_TW
dc.title	Growth and Optoelectronic Properties of Novel Ii-Vi Oxide Semiconductors	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理學系（所）	zh_TW
Appears in Collections:	Research Plans