標題: | Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement |
作者: | Wu, Woei-Cherng Chao, Tien-Sheng Chiu, Te-Hsin Wang, Jer-Chyi Lai, Chao-Sung Ma, Ming-Wen Lo, Wen-Cheng 電子物理學系 Department of Electrophysics |
公開日期: | 2008 |
摘要: | In this paper, high-performance contact etching stop layer (CESL)-strained n-metal-oxide-semiconductor field effect transistor (nMOSFET) with HfO2 gate dielectrics has been successfully demonstrated. The effects of the CESL layer to the high-k without trapping behaviors are investigated by the pulse current-voltage (IV) technique for the first time. It is found that a roughly 55 and 60% increase of mobility and I-ON, respectively, can be achieved for the 300 nm CESL HfO2 nMOSFET using pulsed-IV measurement. Furthermore, a superior HfO2/Si interface for CESL devices is observed, demonstrated by an obvious interface state density reduction (6 x 10(11)-9 x 10(10) cm(-2)). |
URI: | http://hdl.handle.net/11536/9982 http://dx.doi.org/10.1149/1.2938021 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.2938021 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 11 |
Issue: | 8 |
起始頁: | H230 |
結束頁: | H232 |
顯示於類別: | 期刊論文 |