標題: Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement
作者: Wu, Woei-Cherng
Chao, Tien-Sheng
Chiu, Te-Hsin
Wang, Jer-Chyi
Lai, Chao-Sung
Ma, Ming-Wen
Lo, Wen-Cheng
電子物理學系
Department of Electrophysics
公開日期: 2008
摘要: In this paper, high-performance contact etching stop layer (CESL)-strained n-metal-oxide-semiconductor field effect transistor (nMOSFET) with HfO2 gate dielectrics has been successfully demonstrated. The effects of the CESL layer to the high-k without trapping behaviors are investigated by the pulse current-voltage (IV) technique for the first time. It is found that a roughly 55 and 60% increase of mobility and I-ON, respectively, can be achieved for the 300 nm CESL HfO2 nMOSFET using pulsed-IV measurement. Furthermore, a superior HfO2/Si interface for CESL devices is observed, demonstrated by an obvious interface state density reduction (6 x 10(11)-9 x 10(10) cm(-2)).
URI: http://hdl.handle.net/11536/9982
http://dx.doi.org/10.1149/1.2938021
ISSN: 1099-0062
DOI: 10.1149/1.2938021
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 11
Issue: 8
起始頁: H230
結束頁: H232
Appears in Collections:Articles