标题: | 利用光子晶体奈米结构制作高效率光子晶体面射型雷射 Development of High Efficiency Photonic Crystal Surface Emitting Laser |
作者: | 卢廷昌 Lu Tien-chang 国立交通大学光电工程学系(所) |
关键字: | 氮化镓;砷化镓;光子晶体;面射型雷射 |
公开日期: | 2010 |
摘要: | 本计画主要目的在利用AlGaAs、以及AlGaInP这二种材料以奈米制程的方式制作红外光(780nm~980nm)以及红光(635nm~650nm)光子晶体面射型雷射。一般来说,雷射的应用常被两种操作特性所限制,第一是雷射的发散角,雷射发散角的大小将会影响后端应用的耦合以及所需要的雷射特性而影响整体雷射元件的制作成本;其次为半导体雷射高功率输出的困难性。因此,我们利用光子晶体面射型雷射的优点,如具有较好的光限层导致较小的发散角(小于6度以下)以及大面积且高功率雷射出射等特性,将光子晶体制作于AlGaAs以及AlGaInP这二种材料中,并且搭配低折射率层的设计,将光场有效的局限于光子晶体以及多重量子井中,达到较高的光局限因子(confinement factor, Γ),最后达到低操作电流密度且高发光功率的光子晶体面射型雷射元件。而AlGaInP这种材料,可以应用于高解析度的雷射印表机、高密度的光储存以及雷射投影机等应用中,藉此增加解析度以及储存容量的大小;而AlGaAs此材料可以作为光激发范围为780nm~980nm雷射光源,可提升台湾雷射产业的竞争力。 The project is focused on the fabrication of high power photonic crystal surface emitting laser ranging from 780 nm to 980 nm, and from 635 nm to 650 nm by using AlGaAs and AlGaInP materials. In general, the applications of diode lasers will be limited by two characteristics: the first one is the divergence angle of the diode laser. The spot size and divergence angle of the diode laser will play important roles both in the assembly difficulty and the system properties we desired, and then increase the fabrication cost and constrain many other possible applications. The second one is the laser with high power output. According to the advantages of photonic crystal surface emitting laser including better optical confinement caused lower divergence angle of smaller than 6 degree, high output power of lasing emitting characteristics caused by large lasing area and so on, we will fabricate the photonic crystal nanostructure on AlGaAs and AlGaInP materials with low refractive index layer. The optical field will effectively be confined in the photonic crysal nanostructure and multi-quantum wells to enhance the confinement factor (Γ), obtained the lower operation current density, and high output power of photonic crystal surface emitting laser devices. The red light of AlGaInP photonic crystal surface emitting lasers can be applied into the optical storage, high resolution laser printer, high density optical storage, and projector to enhance the resolution and the storage density; the laser fabricated by AlGaAs can be an optical pumping source between 780nm and 980nm. The development shall promote the technology of semiconductor lasers in Taiwan industrial fields. |
官方说明文件#: | NSC99-2622-E009-009-CC3 |
URI: | http://hdl.handle.net/11536/99938 https://www.grb.gov.tw/search/planDetail?id=2144861&docId=345093 |
显示于类别: | Research Plans |