IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING
| dc.citation.epage | 1033 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1031 | en_US |
| dc.citation.volume | 56 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | WU, SL | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:37Z | |
| dc.date.available | 2014-12-08T15:05:37Z | |
| dc.date.issued | 1990-03-12 | en_US |
| dc.identifier.doi | 10.1063/1.102606 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.102606 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4156 | |
| dc.identifier.wosnumber | WOS:A1990CT09900016 | |
| dc.language.iso | en_US | en_US |
| dc.title | IMPROVEMENT ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON CONTACTED N+-P JUNCTIONS WITH HIGH-FIELD STRESSING | en_US |
| dc.type | Article | en_US |
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