Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor
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10.1039/cc9960002239
Abstract
A single-phase polycrystalline mixed-metal oxide WCoO4 film on Si(100) can be prepared by MOCVD with the use of [(eta-C5H5)(CO)(3)WCo(CO)(4)] as a single-source precursor.