Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor
| dc.citation.epage | 2240 | en_US |
| dc.citation.issue | 19 | en_US |
| dc.citation.spage | 2239 | en_US |
| dc.citation.volume | en_US | |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Shyu, SG | en_US |
| dc.contributor.author | Wu, JS | en_US |
| dc.contributor.author | Chuang, SH | en_US |
| dc.contributor.author | Chi, KM | en_US |
| dc.contributor.author | Sung, YS | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:02:17Z | |
| dc.date.available | 2014-12-08T15:02:17Z | |
| dc.date.issued | 1996-10-07 | en_US |
| dc.description.abstract | A single-phase polycrystalline mixed-metal oxide WCoO4 film on Si(100) can be prepared by MOCVD with the use of [(eta-C5H5)(CO)(3)WCo(CO)(4)] as a single-source precursor. | en_US |
| dc.identifier.doi | 10.1039/cc9960002239 | en_US |
| dc.identifier.issn | 1359-7345 | en_US |
| dc.identifier.journal | CHEMICAL COMMUNICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1039/cc9960002239 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/982 | |
| dc.identifier.wosnumber | WOS:A1996VM02300010 | |
| dc.language.iso | en_US | en_US |
| dc.title | Mixed-metal oxide films via a heterobimetallic complex as an MOCVD single-source precursor | en_US |
| dc.type | Article | en_US |