HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS
| dc.citation.epage | 25 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 23 | en_US |
| dc.citation.volume | 13 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | WU, SL | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:03Z | |
| dc.date.available | 2014-12-08T15:05:03Z | |
| dc.date.issued | 1992-01-01 | en_US |
| dc.description.abstract | A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode-exhibited a very low leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V), a very high breakdown voltage (greater-than-or-equal-to 100 V), and a forward ideality factor m less-than-or-equal-to 1.05 over 7 decades. | en_US |
| dc.identifier.doi | 10.1109/55.144939 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.144939 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3577 | |
| dc.identifier.wosnumber | WOS:A1992GV84800008 | |
| dc.language.iso | en_US | en_US |
| dc.title | HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS | en_US |
| dc.type | Article | en_US |