HIGH-PERFORMANCE POLYSILICON CONTACTED SHALLOW JUNCTIONS FORMED BY STACKED-AMORPHOUS-SILICON FILMS

Abstract

A high-performance polysilicon contacted shallow junction diode formed by using a stacked-amorphous-silicon (SAS) film as the diffusion source is reported. The diode-exhibited a very low leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V), a very high breakdown voltage (greater-than-or-equal-to 100 V), and a forward ideality factor m less-than-or-equal-to 1.05 over 7 decades.