Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash Memory

Abstract

In this paper, we demonstrate 50-nm trigate nonvolatile HfO2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories.