Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash Memory
| dc.citation.epage | 417 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 412 | en_US |
| dc.citation.volume | 11 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Lin, Yu-Hsien | en_US |
| dc.contributor.author | Chien, Chao-Hsin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:22:22Z | |
| dc.date.available | 2014-12-08T15:22:22Z | |
| dc.date.issued | 2012-03-01 | en_US |
| dc.description.abstract | In this paper, we demonstrate 50-nm trigate nonvolatile HfO2 nanocrystal memory devices on silicon-on-insulator wafers. The proposed technique, which is fully compatible with current CMOS technologies, is used to form highly localized HfO2 nanocrystals for application in nonvolatile flash memory. We successfully scale down conventional nonvolatile floating gate memories below the 50-nm node to achieve nanodevices for application in next-generation nonvolatile memories. | en_US |
| dc.identifier.doi | 10.1109/TNANO.2011.2179062 | en_US |
| dc.identifier.issn | 1536-125X | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2011.2179062 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15835 | |
| dc.identifier.wosnumber | WOS:000301420900028 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Flash memory | en_US |
| dc.subject | hafnium oxide | en_US |
| dc.subject | nanocrystals | en_US |
| dc.subject | nonvolatile memories | en_US |
| dc.title | Nanoscale 2-Bit/Cell HfO2 Nanocrystal Flash Memory | en_US |
| dc.type | Article | en_US |