High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector
| dc.citation.epage | Q43 | en_US |
| dc.citation.spage | Q41 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Fan, Yang-Shun | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Chen, Chun-Ching | en_US |
| dc.contributor.author | Chang, Che-Chia | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2015-12-02T02:59:22Z | |
| dc.date.available | 2015-12-02T02:59:22Z | |
| dc.date.issued | 2015-01-01 | en_US |
| dc.description.abstract | Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10(4) s at 85 degrees C. Electric-pulse-induced resistance switching test up to 10(8) switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications. (C) 2015 The Electrochemical Society. All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/2.0061508ssl | en_US |
| dc.identifier.issn | 2162-8742 | en_US |
| dc.identifier.journal | ECS SOLID STATE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/2.0061508ssl | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/128108 | |
| dc.identifier.wosnumber | WOS:000358058400004 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector | en_US |
| dc.type | Article | en_US |
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