High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector

Abstract

Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10(4) s at 85 degrees C. Electric-pulse-induced resistance switching test up to 10(8) switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications. (C) 2015 The Electrochemical Society. All rights reserved.