標題: High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector
作者: Fan, Yang-Shun
Liu, Po-Tsun
Chen, Chun-Ching
Chang, Che-Chia
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-一月-2015
摘要: Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10(4) s at 85 degrees C. Electric-pulse-induced resistance switching test up to 10(8) switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications. (C) 2015 The Electrochemical Society. All rights reserved.
URI: http://dx.doi.org/10.1149/2.0061508ssl
http://hdl.handle.net/11536/128108
ISSN: 2162-8742
DOI: 10.1149/2.0061508ssl
期刊: ECS SOLID STATE LETTERS
起始頁: Q41
結束頁: Q43
顯示於類別:期刊論文