標題: | High Endurance and Multilevel Operation in Oxide Semiconductor-Based Resistive RAM Using Thin-Film Transistor as a Selector |
作者: | Fan, Yang-Shun Liu, Po-Tsun Chen, Chun-Ching Chang, Che-Chia 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 1-一月-2015 |
摘要: | Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10(4) s at 85 degrees C. Electric-pulse-induced resistance switching test up to 10(8) switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications. (C) 2015 The Electrochemical Society. All rights reserved. |
URI: | http://dx.doi.org/10.1149/2.0061508ssl http://hdl.handle.net/11536/128108 |
ISSN: | 2162-8742 |
DOI: | 10.1149/2.0061508ssl |
期刊: | ECS SOLID STATE LETTERS |
起始頁: | Q41 |
結束頁: | Q43 |
顯示於類別: | 期刊論文 |